Innoscience has announced a family of four new integrated devices that combine a GaN HEMT, gate driver, current sense, protection and other functions in a single, industry-standard QFN 6 × 8-mm package. The 700-V ISG610x SolidGaN GaN HEMT ICs save board space and reduce component count, while increasing efficiency and simplifying design for applications including USB-PD chargers, LED lighting, and AC/DC power supplies and PFC, QR flyback, ACF, and LLC converters.
(Source: Innoscience)
The integrated ISG610x SolidGaN GaN HEMT ICs cover the range from 140 mΩ to 450 mΩ and offer a wide 9-V to 80-V VCC range, which benefits USB-PD applications that require up to 28-V output, Innoscience said.
The SolidGaN parts can cover the USB-PD output voltage requirements without an external LDO or other parts, in comparison to competitive devices with a limited 30-V input voltage that requires an external high voltage LDO or several discrete components to achieve higher than 15-V output, the company said.
In addition, the family’s loss-less current sensing with 7% accuracy contributes to a reduction in cost, component count and PCB space.
For low power operation, ISG610x family ICs provide a low 115-µA quiescent current, thanks to an automatic standby mode which is activated when the PWM signal voltage remains low for a certain time period. “During this time, most of the internal circuitry is turned off, dramatically reducing energy wastage, enabling devices to meet the no-load standby power specifications of regulatory bodies such as Energy Star,” Innoscience said.
Other features include a programmable switch turn-on slew rate to enable EMI reduction, an internal linear voltage regulator and built-in protection, including under-voltage lock-out (UVLO), over-current protection (OCP) and over-temperature protection (OTP).
A demo board, INNDAD120B1, is available, for a quasi-resonant flyback power supply with 90 V-264 VAC input and 5 V/3 A, 9 V/3 A, 12 V/3 A, 15 V/3 A, 20 V/6 A (120W peak) output.
(Source: Innoscience)
Innoscience also announced a family of low RDS(on) 650-V power transistors at APEC. These new devices enable 40% smaller power supply units (PSUs) that meet 80+ Titanium Plus Efficiency standards. The 30-, 50- and 70-mΩ RON parts are available in the TO-leadless (TOLL) package. The 70-mΩ part is also available in an 8 ×8 DFN package.
Demos showed that the new high-power INN650TA0x0AH and INN650DA070AH (DFN) devices meet the latest efficiency standards. For example, using its new HEMTs, Innoscience demonstrated a 4.2-kW PSU with a power density of 130 W/in3 that meets 80+ Titanium Plus ratings. This is comparison to a well-known supplier of PSUs using silicon devices that quotes 46 W/in3, which would result in a unit that is 40% larger, the company said.
Innoscience is displaying its latest products, including the NV100FQ030A 100-V bidirectional IC and 700-V ISG610x SolidGaN devices, at APEC 2024, booth #1543. The company will also host several industry sessions.
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